JPS6310517B2 - - Google Patents

Info

Publication number
JPS6310517B2
JPS6310517B2 JP57111523A JP11152382A JPS6310517B2 JP S6310517 B2 JPS6310517 B2 JP S6310517B2 JP 57111523 A JP57111523 A JP 57111523A JP 11152382 A JP11152382 A JP 11152382A JP S6310517 B2 JPS6310517 B2 JP S6310517B2
Authority
JP
Japan
Prior art keywords
output
potential
clock pulse
data
high level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57111523A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593783A (ja
Inventor
Atsushi Oritani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57111523A priority Critical patent/JPS593783A/ja
Priority to US06/508,505 priority patent/US4539661A/en
Priority to EP83303761A priority patent/EP0098164B1/en
Priority to DE8383303761T priority patent/DE3378939D1/de
Publication of JPS593783A publication Critical patent/JPS593783A/ja
Publication of JPS6310517B2 publication Critical patent/JPS6310517B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/418—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP57111523A 1982-06-30 1982-06-30 半導体記憶装置 Granted JPS593783A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57111523A JPS593783A (ja) 1982-06-30 1982-06-30 半導体記憶装置
US06/508,505 US4539661A (en) 1982-06-30 1983-06-28 Static-type semiconductor memory device
EP83303761A EP0098164B1 (en) 1982-06-30 1983-06-29 Static type semiconductor memory device
DE8383303761T DE3378939D1 (en) 1982-06-30 1983-06-29 Static type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111523A JPS593783A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS593783A JPS593783A (ja) 1984-01-10
JPS6310517B2 true JPS6310517B2 (en]) 1988-03-07

Family

ID=14563483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111523A Granted JPS593783A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS593783A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0343719U (en]) * 1989-09-04 1991-04-24

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2654243B2 (ja) * 1990-08-31 1997-09-17 日本電気アイシーマイコンシステム株式会社 センスアンプ駆動回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619587A (en) * 1979-07-27 1981-02-24 Nec Corp Memory circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0343719U (en]) * 1989-09-04 1991-04-24

Also Published As

Publication number Publication date
JPS593783A (ja) 1984-01-10

Similar Documents

Publication Publication Date Title
US4417328A (en) Random access semiconductor memory device using MOS transistors
US6333883B2 (en) Destructive read type memory circuit, restoring circuit for the same and sense amplifier
EP0143647B1 (en) Semiconductor memory device
US4125878A (en) Memory circuit
KR900006154B1 (ko) 반도체 메모리 장치
JPH0546040B2 (en])
JPH0793009B2 (ja) 半導体記憶装置
JP3217114B2 (ja) 半導体記憶装置
US6108254A (en) Dynamic random access memory having continuous data line equalization except at address transition during data reading
US6556482B2 (en) Semiconductor memory device
JPH01138694A (ja) メモリ装置
US20040125683A1 (en) Semiconductor integrated circuit device
JPS6362839B2 (en])
EP0329177A2 (en) Semiconductor memory device which can suppress operation error due to power supply noise
JPH0378713B2 (en])
JP2002074943A (ja) 半導体記憶装置
JP3313641B2 (ja) 半導体記憶装置
US6414879B1 (en) Semiconductor memory device
US4514831A (en) Static-type semiconductor memory device
JPS6310517B2 (en])
US6219296B1 (en) Multiport memory cell having a reduced number of write wordlines
JP3057990B2 (ja) 半導体集積回路装置
US5463580A (en) Static semiconductor memory device having improved read operation margin and speed
US5894443A (en) Static semiconductor memory device capable of reducing precharging power dissipation
JPH04271090A (ja) 半導体記憶装置